Base station power supply
With the development of mobile communication network services in the direction of data and packetization, the development trend of mobile communication base stations is also bound to be broadband, large coverage construction and IP-based. The market demand for base station power supply applications is also gradually increasing, among them, the performance of communication power conversion system improvement from the reduction of high-voltage MOSFET on-resistance, in order to achieve the current high demand for balanced energy efficiency goals, the market is also constantly pursuing better performance MOSFETs. ICP DAS Semiconductor's Trench MOSFET series maximizes energy efficiency while maintaining reasonable power consumption, and improves the switching and conduction characteristics of the devices. All key aspects of power supply are optimized to reduce overall cost through functional upgrades and process technology optimization.

PFC (Power Factor Correction)
SJ MOS :VDS=650V-700V Ron@10V(max)=140mΩ-360mΩ 、HWS11SN650H34H、HWS25SN650H12F、HWS25SN650H12H、HWD40SN700J135H
Fly back:
SJ MOS:VDS=650V-700V Ron@10V(max)=140mΩ-360mΩ
HWS25SN650H12F、HWS25SN650H12H、HWD40SN700J135H
Synchronous rectification:
N-channel SGT MOS:VDS=100V-150V Ron@10V(max)<10mΩ
HWS60SN100J77Q、HWS90SN100J70Q